JPS6250986B2 - - Google Patents

Info

Publication number
JPS6250986B2
JPS6250986B2 JP55080011A JP8001180A JPS6250986B2 JP S6250986 B2 JPS6250986 B2 JP S6250986B2 JP 55080011 A JP55080011 A JP 55080011A JP 8001180 A JP8001180 A JP 8001180A JP S6250986 B2 JPS6250986 B2 JP S6250986B2
Authority
JP
Japan
Prior art keywords
film
resistant film
oxidation
substrate
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55080011A
Other languages
English (en)
Japanese (ja)
Other versions
JPS575368A (en
Inventor
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8001180A priority Critical patent/JPS575368A/ja
Publication of JPS575368A publication Critical patent/JPS575368A/ja
Publication of JPS6250986B2 publication Critical patent/JPS6250986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
JP8001180A 1980-06-13 1980-06-13 Manufacture of semiconductor device Granted JPS575368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8001180A JPS575368A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8001180A JPS575368A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS575368A JPS575368A (en) 1982-01-12
JPS6250986B2 true JPS6250986B2 (en]) 1987-10-28

Family

ID=13706374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8001180A Granted JPS575368A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS575368A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01209138A (ja) * 1988-02-18 1989-08-22 Bita:Kk ホワイトカードのプリント方法
JPH036979U (en]) * 1989-06-06 1991-01-23

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113430U (en]) * 1984-12-27 1986-07-17

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01209138A (ja) * 1988-02-18 1989-08-22 Bita:Kk ホワイトカードのプリント方法
JPH036979U (en]) * 1989-06-06 1991-01-23

Also Published As

Publication number Publication date
JPS575368A (en) 1982-01-12

Similar Documents

Publication Publication Date Title
EP0043942B1 (en) Method for forming integrated circuits having a pattern of narrow dimensioned dielectric regions
US4609568A (en) Self-aligned metal silicide process for integrated circuits having self-aligned polycrystalline silicon electrodes
US4508579A (en) Lateral device structures using self-aligned fabrication techniques
US4545114A (en) Method of producing semiconductor device
US4758528A (en) Self-aligned metal process for integrated circuit metallization
JPH05347383A (ja) 集積回路の製法
JPH059939B2 (en])
JP5076098B2 (ja) 第二のポリ層の形成後に二重ポリバイポーラトランジスタの2つのレベルをドーピングするプロセス
KR950010287B1 (ko) 베이스 재결합 전류가 낮은 바이폴라 트랜지스터를 갖는 바이폴라 상보형 금속 산화물 반도체 제조 방법
US4691219A (en) Self-aligned polysilicon base contact structure
EP0095328A2 (en) Method for manufacturing semiconductor device by controlling thickness of insulating film at peripheral portion of element formation region
US4691436A (en) Method for fabricating a bipolar semiconductor device by undercutting and local oxidation
US4883772A (en) Process for making a self-aligned silicide shunt
US4608589A (en) Self-aligned metal structure for integrated circuits
JPS6250986B2 (en])
JPH0366815B2 (en])
JPH04290273A (ja) 窒化シリコンコンデンサの製造方法
EP0264309B1 (en) Self-aligned base shunt for transistor
JPH0126184B2 (en])
JPH02122669A (ja) 半導体装置の製造方法
JP2745946B2 (ja) 半導体集積回路の製造方法
JP2882211B2 (ja) 半導体装置の製造方法
JPS5980968A (ja) 半導体集積回路装置の製造方法
JPS6038874B2 (ja) 絶縁物ゲ−ト電界効果トランジスタの製造方法
JPS5940573A (ja) 半導体集積回路装置の製造方法